We developed a resistive random access memory (RRAM) device with self-rectifying I–V characteristics by integrating a silicon nitride (Si3N4) layer between the bottom electrode and the iron oxide–graphene oxide (FeOx–GO) hybrid active material. The Au/Ni/FeOx–GO/Si3N4/n+-Si device demonstrated excellent resistive switching performance and a high rectification ratio. This innovative design simplifies the RRAM architecture and enhances stability and uniformity in switching.
[Scientific Journal cover design] Low-Thermal-Budget Fluorite-Structure Ferroelectrics for Future Electronic Device Applications
In article number 2100028, Jiyoung Kim, Si Joon Kim, and their team review key factors involved in developing fluorite-structure ferroelectrics
