Atomic two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as key materials for advanced optoelectronic devices, including image sensors and biomedical imaging systems. However, their complex fabrication process has limited their use in flexible, high-performance photodetectors. In this study, a novel approach using atmospheric-pressure plasma-enhanced chemical vapor deposition was employed to directly deposit multi-layered MoS2 onto a flexible Si substrate at low temperatures (<200 °C). This innovative technique resulted in an ultra-flexible 2D-MoS2/Si heterojunction-based photodetector with impressive performance characteristics, including a responsivity of 10.07 mA W−1 and a specific detectivity of 4.53 × 10^10 Jones at 850 nm wavelength. The photodetector also demonstrated excellent flexibility, durability, and linearity under various bending conditions, highlighting its potential for next-generation flexible and wearable optoelectronic devices.-Scientific Journal cover design by scapiens

https://pubs.rsc.org/en/content/articlelanding/2021/nr/d0nr07091b#!divAbstract