The first example of an n-type [1]benzothieno[3,2-b][1]benzothiophene (BTBT)-based semiconductor, D(PhFCO)-BTBT, has been successfully developed through a two-step transition-metal-free process without chromatographic purification. Detailed physicochemical and optoelectronic characterizations of this new semiconductor were performed, and its crystal structure was determined. The molecule has a large optical band gap (~2.9 eV) and a highly stabilized/π-delocalized LUMO. Polycrystalline D(PhFCO)-BTBT thin films, prepared by physical vapor deposition, exhibited large grains and efficient charge transport. The TC/BG-OFET devices showed high electron mobilities and excellent performance, making BTBT a promising candidate for high-mobility n-type organic semiconductors in next-generation (opto)electronics.-Scientific Journal cover design by scapiens
[Scientific Journal cover design] Low-Thermal-Budget Fluorite-Structure Ferroelectrics for Future Electronic Device Applications
In article number 2100028, Jiyoung Kim, Si Joon Kim, and their team review key factors involved in developing fluorite-structure ferroelectrics
