Electric-field-induced doping treatment has been applied to a monolayer graphene (MLG) film to enhance its performance as a transparent conductive electrode (TCE). Using nickel (Ni) as a doping source, conductive bridges of ionized Ni are created through electro-migration from an Ni pad to the MLG films via AlN buffer layers at voltages of 3.62 ± 0.34 V. This treatment significantly reduces the sheet resistance of MLG from 712 ± 75.2 Ω sq−1 to 216 ± 46.1 Ω sq−1, and increases the surface current from 6.63 ± 2.07 nA to 8.91 ± 1.62 nA. Additionally, the work function of the MLG rises from 4.36 eV to 5.0 eV due to p-type doping effects. The presence of Ni atoms in the MLG is confirmed through X-ray photoelectron spectroscopy and Raman spectrum analyses. The Ni-doped MLG is then used as the TCE layer for 365 nm light-emitting diodes, showing superior optical properties compared to standard LEDs with 100 nm-thick indium tin oxide electrodes.-Scientific Journal cover design by scapiens

https://pubs.rsc.org/en/content/articlelanding/2019/nh/c8nh00374b#!divAbstract