Organic-inorganic halide perovskites are gaining significant attention due to their potential in various optoelectronic devices. However, challenges such as lead toxicity, low field-effect mobility, and strong operational hysteresis hinder their practical applications. This paper presents a solution to these issues by enhancing mobility and stability while reducing hysteresis in perovskite-based thin film transistors (TFTs). The approach involves coupling low-dimensional lead-free perovskite material (PEA)2SnI4 with semiconducting carbon nanotubes (semi-CNTs). In these hybrid TFTs, semi-CNTs act as efficient transport paths, facilitating smoother carrier transport with reduced trapping and scattering. The (PEA)2SnI4/semi-CNT hybrid phototransistors exhibit impressive performance, with ultrahigh photoresponsivity of 6.3 × 10^4 A/W and detectivity of 1.12 × 10^17 Jones. These metrics are significantly higher than those of the best available devices, showcasing the potential of perovskite/semi-CNT hybrids for high-performance optoelectronics.-Scientific Journal cover design by scapiens
[Scientific Journal cover design] Low-Thermal-Budget Fluorite-Structure Ferroelectrics for Future Electronic Device Applications
In article number 2100028, Jiyoung Kim, Si Joon Kim, and their team review key factors involved in developing fluorite-structure ferroelectrics
