Low-k amorphous fluorinated polymers, such as poly(perfluoroalkenylvinyl ether) (CYTOP), are commonly used as gate dielectrics in organic field-effect transistors (OFETs) due to their strong hydrophobicity and excellent solvent orthogonality with organic semiconductors. This prevents moisture and contaminants from penetrating the device. Recently, we discovered a new functionality of these fluorinated low-k polymer dielectrics: spontaneous p-doping at the dielectric–semiconductor interface in OFETs. This makes ambipolar charge transport unipolar p-type. For OFETs using indacenodithiophene-co-benzothiadiazole and diketopyrrolopyrrole-thieno[3,2-b]thiophene, the charge transport shifts from ambipolar with common dielectrics like poly(methyl methacrylate) to unipolar p-type with fluorinated dielectrics like CYTOP and poly(tetrafluoroethylene) (Teflon). This modulation is attributed to the rearrangement of C–F bonds at the interface after thermal annealing, which aligns dipole moments and shifts the Fermi level toward the highest occupied molecular orbitals. This study highlights the potential of fluorinated dielectrics in future organic electronics.-Scientific Journal cover design by scapiens
[Scientific Journal cover design] Low-Thermal-Budget Fluorite-Structure Ferroelectrics for Future Electronic Device Applications
In article number 2100028, Jiyoung Kim, Si Joon Kim, and their team review key factors involved in developing fluorite-structure ferroelectrics
