Schottky-Barrier-Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes

Moon Sung Kang, Jeong Ho Cho, and their team have developed a new organic vertical p-n heterojunction photodiode structure stacked onto graphene electrodes. By controlling the Schottky barrier height at the p-type organic semiconductor-graphene junction, they can reduce the dark current density and increase the photocurrent, enhancing photodiode performance.

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