Sang-Hee Ko Park, Sung-Yool Choi, and their team have developed a one selector-one memristor (1S-1M) integrated circuit. This innovation uses a pV3D3-based memristor and an a-IZTO-based selector on a flexible PES substrate. The 1S-1M devices successfully implement Single-Instruction Multiple-Data (SIMD) processing, performing NOT and NOR gates over multiple rows within the array.
[Scientific Journal cover design] Low-Thermal-Budget Fluorite-Structure Ferroelectrics for Future Electronic Device Applications
In article number 2100028, Jiyoung Kim, Si Joon Kim, and their team review key factors involved in developing fluorite-structure ferroelectrics
