Perovskite materials are known for their outstanding performance in photovoltaic devices, but their application in thin-film transistors (TFTs) has been slower to develop. This study presents high-performance, lead-free p-channel perovskite TFTs using a simple one-step spin-coating method with premixed binary solvents (DMF and CB/EA). The addition of CB/EA antisolvents aids in the formation of high-quality films with improved grain orientation and coverage. These perovskite TFTs exhibit a fivefold increase in mobility and a twofold increase in the current on/off ratio, with enhanced stability. Additionally, a complementary inverter with high gain and phototransistors with impressive photodetectivity are demonstrated, highlighting the potential for broader applications beyond energy. -Scientific Journal cover art design by scapiens
[Scientific Journal cover design] Low-Thermal-Budget Fluorite-Structure Ferroelectrics for Future Electronic Device Applications
In article number 2100028, Jiyoung Kim, Si Joon Kim, and their team review key factors involved in developing fluorite-structure ferroelectrics
