2D materials, characterized by their sharp interfaces and absence of dangling bonds, are enabling conventional heterojunction devices to surpass their previous limitations. In article number 1800745, Jihyun Kim and co-workers demonstrate high current amplification in vertical double heterojunction bipolar transistors using 2D materials. Operating in a common-emitter mode, these transistors showcase significant potential to broaden the application range of heterojunction electronic devices based on various 2D materials.-Scientific Journal cover design by scapiens

https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201970015