Kilwon Cho, Jae-Joon Kim, and their team have developed a groundbreaking device that functions as a unipolar p- or n-type transistor. By incorporating a control-gate electrode in the middle of the dielectric layer, the device effectively suppresses counter carrier injection. This advancement is a significant step towards creating practical ambipolar transistor integrated circuits, crucial for digital and integrated circuit technology on wafers. / Journal cover design by Scapiens
[Scientific Journal cover design] Low-Thermal-Budget Fluorite-Structure Ferroelectrics for Future Electronic Device Applications
In article number 2100028, Jiyoung Kim, Si Joon Kim, and their team review key factors involved in developing fluorite-structure ferroelectrics