In a recent study, researchers developed a cost-effective method for producing Cu(In,Ga)(S,Se)2 (CIGS) photovoltaic absorber layers by using a nozzle-free Se shower. This innovative technique employs a porous material to uniformly distribute Se vapor, significantly reducing the reliance on expensive H2Se gas. The method achieved high-quality selenization of the CuInGa precursor and demonstrated impressive photovoltaic performance with an open-circuit voltage of 0.638 V, short-circuit current density of 34 mA/cm², fill factor of 67.2%, and an active area efficiency of 14.57%.